2SC6026MFVGR,L3F
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- Mfr.Part #
- 2SC6026MFVGR,L3F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A VESM
- Stock
- 2,153
- In Stock ：
- 2,153
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 60MHz
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- hFE Min :
- 120
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 500μm
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-723
- Contact Plating :
- Silver, Tin
- Width :
- 800μm
- Continuous Collector Current :
- 150mA
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 150mA
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Saturation Voltage :
- 150mV
- Length :
- 1.2mm
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Published :
- 2014
- Max Power Dissipation :
- 150mW
- Datasheets
- 2SC6026MFVGR,L3F
NPN 150°C TJ 100nA ICBO SOT-723 Cut Tape (CT) Surface Mount
2SC6026MFVGR,L3F Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
2SC6026MFVGR,L3F Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC6026MFVGR,L3F Applications
There are a lot of Toshiba Semiconductor and Storage
2SC6026MFVGR,L3F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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