2SC5994-TD-E
- Mfr.Part #
- 2SC5994-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A PCP
- Stock
- 1,018
- In Stock :
- 1,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Width :
- 2.5mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 420MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- Length :
- 4.5mm
- hFE Min :
- 200
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Power Dissipation :
- 1.3W
- Gain Bandwidth Product :
- 420MHz
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Height :
- 1.5mm
- Factory Lead Time :
- 2 Weeks
- Published :
- 2005
- Frequency :
- 420MHz
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1.3W
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 135mV
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Max Breakdown Voltage :
- 50V
- Datasheets
- 2SC5994-TD-E

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5994-TD-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 135mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.420MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SC5994-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
2SC5994-TD-E Applications
There are a lot of ON Semiconductor
2SC5994-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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