2SC5994-TD-E
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- Mfr.Part #
- 2SC5994-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A PCP
- Stock
- 1,018
- In Stock ：
- 1,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 1.3W
- Gain Bandwidth Product :
- 420MHz
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 2A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 2.5mm
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 1.3W
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Length :
- 4.5mm
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Published :
- 2005
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- JESD-609 Code :
- e6
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 200
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 420MHz
- Frequency :
- 420MHz
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 135mV
- Height :
- 1.5mm
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-243AA
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Pbfree Code :
- yes
- Pin Count :
- 3
- Datasheets
- 2SC5994-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5994-TD-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 135mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.420MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SC5994-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 420MHz
2SC5994-TD-E Applications
There are a lot of ON Semiconductor
2SC5994-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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