2SC5964-TD-E
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- Mfr.Part #
- 2SC5964-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A PCP
- Stock
- 6,052
- In Stock ：
- 6,052
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 100mA, 2A
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Length :
- 4.5mm
- Frequency :
- 380MHz
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Package / Case :
- TO-243AA
- Power Dissipation :
- 1.3W
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Collector Current :
- 3A
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 380MHz
- Max Power Dissipation :
- 3.5W
- Width :
- 2.5mm
- Mount :
- Surface Mount
- Power - Max :
- 3.5W
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 100mV
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Published :
- 2012
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SC5964-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5964-TD-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 3A volts at its maximum.
2SC5964-TD-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 290mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SC5964-TD-E Applications
There are a lot of ON Semiconductor
2SC5964-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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