2SC5880TV2R
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- Mfr.Part #
- 2SC5880TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A ATV
- Stock
- 28,107
- In Stock ：
- 28,107
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 200MHz
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 2V
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Pin Count :
- 3
- Package / Case :
- 3-SIP
- Current - Collector (Ic) (Max) :
- 2A
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SC5880TV2R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Reel (TR) Through Hole
2SC5880TV2R Overview
In this device, the DC current gain is 180 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC5880TV2R Features
the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SC5880TV2R Applications
There are a lot of ROHM Semiconductor
2SC5880TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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