2SC5880TV2Q
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- Mfr.Part #
- 2SC5880TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A ATV
- Stock
- 13,334
- In Stock ：
- 13,334
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Published :
- 2011
- JESD-30 Code :
- R-PSIP-T3
- Package / Case :
- 3-SIP
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 6V
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Max Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Max Collector Current :
- 2A
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- HTS Code :
- 8541.29.00.75
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector (Ic) (Max) :
- 2A
- Transition Frequency :
- 200MHz
- Datasheets
- 2SC5880TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Reel (TR) Through Hole
2SC5880TV2Q Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 2A volts can be achieved.
2SC5880TV2Q Features
the DC current gain for this device is 120 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 200MHz
2SC5880TV2Q Applications
There are a lot of ROHM Semiconductor
2SC5880TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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