2SC5868TLQ
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- Mfr.Part #
- 2SC5868TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TSMT3
- Stock
- 123,208
- In Stock ：
- 123,208
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SC5868
- Radiation Hardening :
- No
- Published :
- 2004
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 75mV
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 500mA
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-96
- Mount :
- Surface Mount
- Factory Lead Time :
- 40 Weeks
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Transistor Type :
- NPN
- Contact Plating :
- Copper, Silver, Tin
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 500mA
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Datasheets
- 2SC5868TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SC5868TLQ Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 75mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).300MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SC5868TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLQ Applications
There are a lot of ROHM Semiconductor
2SC5868TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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