2SC5868TLQ
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- Mfr.Part #
- 2SC5868TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TSMT3
- Stock
- 123,208
- In Stock ：
- 123,208
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Transition Frequency :
- 300MHz
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 75mV
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Contact Plating :
- Copper, Silver, Tin
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 40 Weeks
- Mount :
- Surface Mount
- Base Part Number :
- 2SC5868
- Number of Elements :
- 1
- Pin Count :
- 3
- Published :
- 2004
- Package / Case :
- SC-96
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 120
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- 2SC5868TLQ
2SC5868TLQ Documents
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SC5868TLQ Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 75mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 500mA is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).300MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
2SC5868TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLQ Applications
There are a lot of ROHM Semiconductor
2SC5868TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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