2SC5826TV2R

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Mfr.Part #
2SC5826TV2R
Manufacturer
ROHM Semiconductor
Package / Case
3-SIP
Datasheet
Download
Description
TRANS NPN 60V 3A ATV
Stock
19,276
In Stock :
19,276

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Packaging :
Tape and Reel (TR)
Polarity/Channel Type :
NPN
JESD-30 Code :
R-PSIP-T3
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 100mA 2V
Surface Mount :
No
Mounting Type :
Through Hole
Number of Terminations :
3
JESD-609 Code :
e1
Transition Frequency :
200MHz
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Configuration :
Single
Current - Collector Cutoff (Max) :
1μA ICBO
Current - Collector (Ic) (Max) :
3A
Peak Reflow Temperature (Cel) :
260
Power - Max :
1W
Number of Elements :
1
Terminal Finish :
TIN SILVER COPPER
Frequency - Transition :
200MHz
HTS Code :
8541.29.00.75
Pin Count :
3
Published :
2011
Time@Peak Reflow Temperature-Max (s) :
10
Voltage - Collector Emitter Breakdown (Max) :
60V
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Power Dissipation-Max (Abs) :
1W
Package / Case :
3-SIP
Terminal Position :
Single
Datasheets
2SC5826TV2R
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SC5826TV2R from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:3-SIP, 2SC5826TV2R pinout, 2SC5826TV2R datasheet PDF, 2SC5826TV2R amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SC5826TV2R ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor 2SC5826TV2R


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Reel (TR) Through Hole

2SC5826TV2R Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.A transition frequency of 200MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

2SC5826TV2R Features


the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
a transition frequency of 200MHz


2SC5826TV2R Applications


There are a lot of ROHM Semiconductor
2SC5826TV2R applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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