2SC5824T100R
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- Mfr.Part #
- 2SC5824T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A MPT3
- Stock
- 119
- In Stock ：
- 119
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 2V
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Current Rating :
- 3A
- Terminal Finish :
- TIN COPPER
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 2W
- Frequency :
- 200MHz
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- hFE Min :
- 120
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Termination :
- SMD/SMT
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- JESD-609 Code :
- e2
- Transition Frequency :
- 200MHz
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 2008
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SC5824
- Power Dissipation :
- 2W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Continuous Collector Current :
- 3A
- Datasheets
- 2SC5824T100R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC5824T100R Overview
In this device, the DC current gain is 180 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).200MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
2SC5824T100R Features
the DC current gain for this device is 180 @ 100mA 2V
a collector emitter saturation voltage of 200V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SC5824T100R Applications
There are a lot of ROHM Semiconductor
2SC5824T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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