2SC5707-TL-E

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Mfr.Part #
2SC5707-TL-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 50V 8A TPFA
Stock
9,055
In Stock :
9,055

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Number of Pins :
3
hFE Min :
200
Pin Count :
3
Emitter Base Voltage (VEBO) :
6V
Lead Free :
Lead Free
Pbfree Code :
yes
Published :
2005
ECCN Code :
EAR99
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 9 hours ago)
Collector Base Voltage (VCBO) :
100V
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
50V
Power Dissipation :
1W
Collector Emitter Saturation Voltage :
240mV
JESD-609 Code :
e6
Length :
6.5mm
Max Collector Current :
8A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Vce Saturation (Max) @ Ib, Ic :
240mV @ 175mA, 3.5A
Frequency :
330MHz
Max Breakdown Voltage :
50V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Width :
5.5mm
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Radiation Hardening :
No
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
50V
Height :
2.3mm
Transistor Type :
NPN
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
330MHz
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Factory Lead Time :
4 Weeks
Max Power Dissipation :
1W
Packaging :
Tape and Reel (TR)
Datasheets
2SC5707-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5707-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, 2SC5707-TL-E pinout, 2SC5707-TL-E datasheet PDF, 2SC5707-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5707-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5707-TL-E


NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SC5707-TL-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.The collector emitter saturation voltage is 240mV, which allows for maximum design flexibility.When VCE saturation is 240mV @ 175mA, 3.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 8A volts can be achieved.

2SC5707-TL-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 240mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V


2SC5707-TL-E Applications


There are a lot of ON Semiconductor
2SC5707-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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