2SC5707-E

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Mfr.Part #
2SC5707-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 50V 8A TP
Stock
25,953
In Stock :
25,953

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
50V
Lifecycle Status :
ACTIVE (Last Updated: 9 hours ago)
Packaging :
Bulk
Number of Pins :
3
Published :
2001
Factory Lead Time :
2 Weeks
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
110mV
Pin Count :
3
Max Power Dissipation :
1W
JESD-609 Code :
e6
Collector Base Voltage (VCBO) :
100V
Number of Elements :
1
Frequency :
330MHz
Emitter Base Voltage (VEBO) :
6V
hFE Min :
200
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
240mV @ 175mA, 3.5A
Gain Bandwidth Product :
330MHz
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
50V
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Lead Free :
Lead Free
Power Dissipation :
1W
Pbfree Code :
yes
Transistor Type :
NPN
Element Configuration :
Single
Max Breakdown Voltage :
50V
ECCN Code :
EAR99
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Datasheets
2SC5707-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5707-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SC5707-E pinout, 2SC5707-E datasheet PDF, 2SC5707-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5707-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5707-E


NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC5707-E Overview


This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.

2SC5707-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V


2SC5707-E Applications


There are a lot of ON Semiconductor
2SC5707-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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