2SC5707-E
- Mfr.Part #
- 2SC5707-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 8A TP
- Stock
- 25,953
- In Stock :
- 25,953
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Packaging :
- Bulk
- Number of Pins :
- 3
- Published :
- 2001
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 110mV
- Pin Count :
- 3
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Frequency :
- 330MHz
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 200
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 175mA, 3.5A
- Gain Bandwidth Product :
- 330MHz
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Lead Free :
- Lead Free
- Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheets
- 2SC5707-E

NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5707-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.
2SC5707-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-E Applications
There are a lot of ON Semiconductor
2SC5707-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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