2SC5707-E
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- Mfr.Part #
- 2SC5707-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 8A TP
- Stock
- 25,953
- In Stock ：
- 25,953
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 175mA, 3.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Transistor Type :
- NPN
- Frequency :
- 330MHz
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 50V
- Published :
- 2001
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- hFE Min :
- 200
- Max Collector Current :
- 8A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 330MHz
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 110mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Datasheets
- 2SC5707-E
NPN 150°C TJ 100nA ICBO 1 Elements SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5707-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 110mV.A VCE saturation (Max) of 240mV @ 175mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 8A volts is possible.
2SC5707-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V
2SC5707-E Applications
There are a lot of ON Semiconductor
2SC5707-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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