2SC5706-P-TL-E
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- Mfr.Part #
- 2SC5706-P-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 5A TPFA
- Stock
- 28,562
- In Stock ：
- 28,562
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 240mV
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 800mW
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 2A
- Frequency - Transition :
- 400MHz
- Mounting Type :
- Surface Mount
- Power - Max :
- 800mW
- Datasheets
- 2SC5706-P-TL-E
NPN 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SC5706-P-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 2V.When VCE saturation is 240mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 5A volts can be achieved.
2SC5706-P-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 240mV @ 100mA, 2A
2SC5706-P-TL-E Applications
There are a lot of ON Semiconductor
2SC5706-P-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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