2SC5706-P-E
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- Mfr.Part #
- 2SC5706-P-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5A TP
- Stock
- 33,135
- In Stock ：
- 33,135
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Supplier Device Package :
- TP
- Current - Collector (Ic) (Max) :
- 5A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Transistor Type :
- NPN
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 2A
- Power - Max :
- 800mW
- Frequency - Transition :
- 400MHz
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SC5706-P-E
NPN 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC5706-P-E Overview
DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 240mV @ 100mA, 2A.Product comes in TP supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
2SC5706-P-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 240mV @ 100mA, 2A
the supplier device package of TP
2SC5706-P-E Applications
There are a lot of Rochester Electronics, LLC
2SC5706-P-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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