2SC5659T2LP
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- Mfr.Part #
- 2SC5659T2LP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A VMT3
- Stock
- 3,657
- In Stock ：
- 3,657
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 40V
- Lead Free :
- Lead Free
- Current Rating :
- 50mA
- Pin Count :
- 3
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 25V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Base Part Number :
- 2SC5659
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 300MHz
- Max Power Dissipation :
- 150mW
- ECCN Code :
- EAR99
- Package / Case :
- SOT-723
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Max Collector Current :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 1mA 6V
- Contact Plating :
- Copper, Tin
- hFE Min :
- 82
- Voltage - Rated DC :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Continuous Collector Current :
- 50mA
- Factory Lead Time :
- 13 Weeks
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Published :
- 2004
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Gain Bandwidth Product :
- 300MHz
- Datasheets
- 2SC5659T2LP
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5659T2LP Overview
In this device, the DC current gain is 82 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC5659T2LP Features
the DC current gain for this device is 82 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC5659T2LP Applications
There are a lot of ROHM Semiconductor
2SC5659T2LP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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