2SC5658RM3T5G
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- Mfr.Part #
- 2SC5658RM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT723
- Stock
- 3,763
- In Stock ：
- 3,763
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 180MHz
- Length :
- 1.25mm
- Number of Pins :
- 3
- Base Part Number :
- 2SC5658
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 1mA 6V
- Collector Emitter Saturation Voltage :
- 400mV
- Max Power Dissipation :
- 260mW
- Width :
- 850μm
- Polarity/Channel Type :
- NPN
- Published :
- 2010
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Package / Case :
- SOT-723
- JESD-609 Code :
- e3
- Frequency :
- 180MHz
- Gain Bandwidth Product :
- 180MHz
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Power Dissipation :
- 260mW
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Height :
- 550μm
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Datasheets
- 2SC5658RM3T5G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658RM3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 215 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 60mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SC5658RM3T5G Features
the DC current gain for this device is 215 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
2SC5658RM3T5G Applications
There are a lot of ON Semiconductor
2SC5658RM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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