2SC5658RM3T5G
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- Mfr.Part #
- 2SC5658RM3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT723
- Stock
- 3,763
- In Stock ：
- 3,763
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transition Frequency :
- 180MHz
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Frequency :
- 180MHz
- Package / Case :
- SOT-723
- Published :
- 2010
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 400mV
- Surface Mount :
- yes
- Max Power Dissipation :
- 260mW
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- Base Part Number :
- 2SC5658
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 180MHz
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Width :
- 850μm
- Element Configuration :
- Single
- Height :
- 550μm
- Number of Terminations :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Power Dissipation :
- 260mW
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Length :
- 1.25mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Datasheets
- 2SC5658RM3T5G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658RM3T5G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 215 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 60mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SC5658RM3T5G Features
the DC current gain for this device is 215 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
2SC5658RM3T5G Applications
There are a lot of ON Semiconductor
2SC5658RM3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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