2SC5658M3T5G
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- Mfr.Part #
- 2SC5658M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT723
- Stock
- 2,790
- In Stock ：
- 2,790
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2010
- Collector Emitter Saturation Voltage :
- 400mV
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 260mW
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Width :
- 850μm
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 3
- Number of Elements :
- 1
- hFE Min :
- 120
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Length :
- 1.25mm
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 100mA
- Height :
- 550μm
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 180MHz
- Base Part Number :
- 2SC5658
- Max Power Dissipation :
- 260mW
- Package / Case :
- SOT-723
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Datasheets
- 2SC5658M3T5G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-723 Tape & Reel (TR) Surface Mount
2SC5658M3T5G Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 400mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.In this part, there is a transition frequency of 180MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 100mA volts.
2SC5658M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 180MHz
2SC5658M3T5G Applications
There are a lot of ON Semiconductor
2SC5658M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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