2SC5242OTU
- Mfr.Part #
- 2SC5242OTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3P
- Stock
- 5,507
- In Stock :
- 5,507
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 250V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Frequency :
- 30MHz
- Gain Bandwidth Product :
- 30MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 250V
- Power Dissipation :
- 130W
- Max Collector Current :
- 17A
- Collector Base Voltage (VCBO) :
- 250V
- Max Power Dissipation :
- 130W
- Transition Frequency :
- 30MHz
- Radiation Hardening :
- No
- Published :
- 2015
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- 2SC5242
- Weight :
- 6.401g
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- hFE Min :
- 55
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Datasheets
- 2SC5242OTU
2SC5242OTU Documents

NPN -55°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2SC5242OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 17A volts.
2SC5242OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5242OTU Applications
There are a lot of ON Semiconductor
2SC5242OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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