2SC5242OTU
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- Mfr.Part #
- 2SC5242OTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO3P
- Stock
- 5,507
- In Stock ：
- 5,507
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 250V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Max Power Dissipation :
- 130W
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Pbfree Code :
- yes
- hFE Min :
- 55
- Transition Frequency :
- 30MHz
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 250V
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 30MHz
- Base Part Number :
- 2SC5242
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 250V
- JESD-609 Code :
- e3
- Weight :
- 6.401g
- Published :
- 2015
- Gain Bandwidth Product :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 130W
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mount :
- Through Hole
- Max Collector Current :
- 17A
- Number of Terminations :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Datasheets
- 2SC5242OTU
2SC5242OTU Documents
NPN -55°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2SC5242OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 1A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 30MHz.During maximum operation, collector current can be as low as 17A volts.
2SC5242OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5242OTU Applications
There are a lot of ON Semiconductor
2SC5242OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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