2SC5233BTE85LF
- Mfr.Part #
- 2SC5233BTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 12V 0.5A USM
- Stock
- 15,944
- In Stock :
- 15,944
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 80MHz
- Operating Temperature :
- 125°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 500mA
- Power Dissipation-Max (Abs) :
- 0.1W
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Surface Mount :
- yes
- Reach Compliance Code :
- Unknown
- Frequency - Transition :
- 130MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Power - Max :
- 100mW
- RoHS Status :
- RoHS Compliant
- Packaging :
- Cut Tape (CT)
- Datasheets
- 2SC5233BTE85LF

NPN 125°C TJ 100nA ICBO NPN SC-70, SOT-323 Cut Tape (CT) Surface Mount
2SC5233BTE85LF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 500 @ 10mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 200mA.Parts of this part have transition frequencies of 80MHz.This device displays a 12V maximum voltage - Collector Emitter Breakdown.
2SC5233BTE85LF Features
the DC current gain for this device is 500 @ 10mA 2V
the vce saturation(Max) is 250mV @ 10mA, 200mA
a transition frequency of 80MHz
2SC5233BTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5233BTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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