2SC5201,T6F(J
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- Mfr.Part #
- 2SC5201,T6F(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 600V 0.05A TO92MOD
- Stock
- 32,475
- In Stock ：
- 32,475
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 20mA
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 20mA 5V
- Power - Max :
- 900mW
- Current - Collector (Ic) (Max) :
- 50mA
- Transistor Type :
- NPN
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC5201,T6F(J
NPN 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC5201,T6F(J Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 20mA 5V.When VCE saturation is 1V @ 500mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 600V maximal voltage - Collector Emitter Breakdown.
2SC5201,T6F(J Features
the DC current gain for this device is 100 @ 20mA 5V
the vce saturation(Max) is 1V @ 500mA, 20mA
2SC5201,T6F(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5201,T6F(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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