2SC5200RTU
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- Mfr.Part #
- 2SC5200RTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO264-3
- Stock
- 23,257
- In Stock ：
- 23,257
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SC5200
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Package / Case :
- TO-264-3, TO-264AA
- Max Power Dissipation :
- 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Transition Frequency :
- 30MHz
- Collector Emitter Voltage (VCEO) :
- 250V
- Collector Base Voltage (VCBO) :
- 250V
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Packaging :
- Tube
- Operating Temperature :
- -50°C~150°C TJ
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Published :
- 2015
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Weight :
- 6.756g
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- hFE Min :
- 55
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 30MHz
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSFM-T3
- Frequency :
- 30MHz
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 150W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 17A
- Datasheets
- 2SC5200RTU
NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
2SC5200RTU Overview
This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 17A volts is possible.
2SC5200RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5200RTU Applications
There are a lot of ON Semiconductor
2SC5200RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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