2SC5200RTU

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Mfr.Part #
2SC5200RTU
Manufacturer
onsemi
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
TRANS NPN 250V 17A TO264-3
Stock
23,257
In Stock :
23,257

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Contact Plating :
Tin
Element Configuration :
Single
Collector Base Voltage (VCBO) :
250V
Frequency :
30MHz
Current - Collector Cutoff (Max) :
5μA ICBO
Transistor Application :
AMPLIFIER
Number of Elements :
1
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
3V @ 800mA, 8A
Mount :
Through Hole
Number of Terminations :
3
Weight :
6.756g
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
250V
Max Collector Current :
17A
RoHS Status :
RoHS Compliant
Packaging :
Tube
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
Max Power Dissipation :
150W
hFE Min :
55
Collector Emitter Breakdown Voltage :
250V
Power Dissipation :
150W
Transistor Element Material :
SILICON
Transition Frequency :
30MHz
Lead Free :
Lead Free
Base Part Number :
2SC5200
Transistor Type :
NPN
Factory Lead Time :
6 Weeks
ECCN Code :
EAR99
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Gain Bandwidth Product :
30MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2015
Package / Case :
TO-264-3, TO-264AA
Operating Temperature :
-50°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
55 @ 1A 5V
Datasheets
2SC5200RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC5200RTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:2SC5200, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-50°C~150°C TJ, 2SC5200RTU pinout, 2SC5200RTU datasheet PDF, 2SC5200RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC5200RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC5200RTU


NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole

2SC5200RTU Overview


This device has a DC current gain of 55 @ 1A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3V @ 800mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 30MHz.A maximum collector current of 17A volts is possible.

2SC5200RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz


2SC5200RTU Applications


There are a lot of ON Semiconductor
2SC5200RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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