2SC5200OTU
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- Mfr.Part #
- 2SC5200OTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS NPN 250V 17A TO264-3
- Stock
- 414
- In Stock ：
- 414
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Collector Emitter Voltage (VCEO) :
- 250V
- Published :
- 2005
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Base Voltage (VCBO) :
- 250V
- Max Power Dissipation :
- 150W
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Base Part Number :
- 2SC5200
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Operating Temperature :
- -50°C~150°C TJ
- REACH SVHC :
- No SVHC
- hFE Min :
- 55
- Transition Frequency :
- 30MHz
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Power Dissipation :
- 150W
- Max Collector Current :
- 17A
- Collector Emitter Breakdown Voltage :
- 250V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Contact Plating :
- Tin
- Frequency :
- 30MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Weight :
- 6.756g
- Gain Bandwidth Product :
- 30MHz
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Mount :
- Through Hole
- Datasheets
- 2SC5200OTU
NPN -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON NPN TO-264-3, TO-264AA Tube Through Hole
2SC5200OTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 1A 5V.When VCE saturation is 3V @ 800mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 30MHz.A maximum collector current of 17A volts can be achieved.
2SC5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz
2SC5200OTU Applications
There are a lot of ON Semiconductor
2SC5200OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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