2SC5200N(S1,E,S)
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- Mfr.Part #
- 2SC5200N(S1,E,S)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 230V 15A TO3P
- Stock
- 1,666
- In Stock ：
- 1,666
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 30MHz
- Operating Temperature :
- 150°C TJ
- Published :
- 2013
- Max Power Dissipation :
- 150W
- Collector Emitter Breakdown Voltage :
- 230V
- hFE Min :
- 35
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1A 5V
- Max Collector Current :
- 15A
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Collector Emitter Voltage (VCEO) :
- 230V
- Collector Base Voltage (VCBO) :
- 230V
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Packaging :
- Tube
- Weight :
- 6.961991g
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Continuous Collector Current :
- 15A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 400mV
- Package / Case :
- TO-3P-3, SC-65-3
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Datasheets
- 2SC5200N(S1,E,S)
NPN 150°C TJ 5μA ICBO TO-3P-3, SC-65-3 Tube Through Hole
2SC5200N(S1,E,S) Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 15A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 15A volts at its maximum.
2SC5200N(S1,E,S) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
2SC5200N(S1,E,S) Applications
There are a lot of Toshiba Semiconductor and Storage
2SC5200N(S1,E,S) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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