2SC4617TLQ
- Mfr.Part #
- 2SC4617TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3
- Stock
- 82,848
- In Stock :
- 82,848
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- VCEsat-Max :
- 0.4 V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transition Frequency :
- 180MHz
- Transistor Type :
- NPN
- Package / Case :
- SC-75, SOT-416
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- 150mA
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current Rating :
- 150mA
- Number of Pins :
- 3
- Max Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- Contact Plating :
- Copper, Silver, Tin
- hFE Min :
- 120
- Factory Lead Time :
- 13 Weeks
- Published :
- 2009
- Base Part Number :
- 2SC4617
- Max Collector Current :
- 150mA
- Terminal Position :
- Dual
- Type :
- GENERAL PURPOSE
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 50V
- Datasheets
- 2SC4617TLQ

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SC4617TLQ Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 50mA.A 150mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 150mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
2SC4617TLQ Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC4617TLQ Applications
There are a lot of ROHM Semiconductor
2SC4617TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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