2SC4617G
- Mfr.Part #
- 2SC4617G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC75 SOT416
- Stock
- 33,105
- In Stock :
- 33,105
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-75, SOT-416
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 125mW
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 400mV
- Width :
- 6.35mm
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Current Rating :
- 100mA
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Base Part Number :
- 2SC4617
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 50V
- Frequency :
- 180MHz
- Gain Bandwidth Product :
- 180MHz
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Power Dissipation :
- 125mW
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- REACH SVHC :
- Unknown
- Surface Mount :
- yes
- Height :
- 6.35mm
- Voltage - Rated DC :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 120
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Datasheets
- 2SC4617G

NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SC4617G Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 60mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).180MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
2SC4617G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 180MHz
2SC4617G Applications
There are a lot of ON Semiconductor
2SC4617G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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