2SC4617EBTLR
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- Mfr.Part #
- 2SC4617EBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3F
- Stock
- 9,387
- In Stock ：
- 9,387
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 400mV
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Continuous Collector Current :
- 150mA
- Length :
- 1.6mm
- Transistor Type :
- NPN
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 9 Weeks
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 120
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Height :
- 700μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Width :
- 860μm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 50V
- Package / Case :
- SC-89, SOT-490
- Max Collector Current :
- 150mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Base Part Number :
- 2SC4617
- Collector Emitter Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 180MHz
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Datasheets
- 2SC4617EBTLR
2SC4617EBTLR Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SC4617EBTLR Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC4617EBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4617EBTLR Applications
There are a lot of ROHM Semiconductor
2SC4617EBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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