2SC4135T-TL-E

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Mfr.Part #
2SC4135T-TL-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 100V 2A TPFA
Stock
1,391
In Stock :
1,391

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
400mV @ 100mA, 1A
Collector Base Voltage (VCBO) :
120V
Number of Pins :
3
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Breakdown Voltage :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 5V
Transistor Type :
NPN
hFE Min :
100
Power Dissipation :
1W
Max Collector Current :
2A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Factory Lead Time :
2 Weeks
Emitter Base Voltage (VEBO) :
6V
Frequency :
120MHz
Reach Compliance Code :
not_compliant
Current - Collector (Ic) (Max) :
2A
Published :
2012
JESD-609 Code :
e6
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Collector Emitter Voltage (VCEO) :
100V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Base Part Number :
2SC4135
ECCN Code :
EAR99
Pbfree Code :
yes
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Lead Free :
Lead Free
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC4135T-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Base Part Number:2SC4135, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, 2SC4135T-TL-E pinout, 2SC4135T-TL-E datasheet PDF, 2SC4135T-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC4135T-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC4135T-TL-E


NPN 150°C TJ 100nA ICBO 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SC4135T-TL-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 2A volts.

2SC4135T-TL-E Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V


2SC4135T-TL-E Applications


There are a lot of ON Semiconductor
2SC4135T-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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