2SC4135T-E

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Mfr.Part #
2SC4135T-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 100V 2A TP
Stock
11,656
In Stock :
11,656

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e6
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 5V
Base Part Number :
2SC4135
Frequency - Transition :
120MHz
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Pbfree Code :
yes
hFE Min :
100
Collector Base Voltage (VCBO) :
120V
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
400mV @ 100mA, 1A
ECCN Code :
EAR99
Number of Pins :
3
Max Collector Current :
2A
Pin Count :
3
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Power - Max :
1W
Emitter Base Voltage (VEBO) :
-6V
Collector Emitter Voltage (VCEO) :
100V
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
100V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
2 Weeks
Max Power Dissipation :
1W
Published :
2012
Operating Temperature :
150°C TJ
Datasheets
2SC4135T-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC4135T-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SC4135, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, 2SC4135T-E pinout, 2SC4135T-E datasheet PDF, 2SC4135T-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC4135T-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC4135T-E


NPN 150°C TJ 100nA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC4135T-E Overview


In this device, the DC current gain is 200 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 100mA, 1A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SC4135T-E Features


the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V


2SC4135T-E Applications


There are a lot of ON Semiconductor
2SC4135T-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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