2SC4135S-E

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Mfr.Part #
2SC4135S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 100V 2A TP
Stock
2,723
In Stock :
2,723

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
100
Vce Saturation (Max) @ Ib, Ic :
400mV @ 100mA, 1A
Collector Emitter Breakdown Voltage :
100V
Operating Temperature :
150°C TJ
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Pbfree Code :
yes
Base Part Number :
2SC4135
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 5V
Pin Count :
3
Power - Max :
1W
Emitter Base Voltage (VEBO) :
-6V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
JESD-609 Code :
e6
Lead Free :
Lead Free
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency - Transition :
120MHz
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Collector Current :
2A
Published :
2012
Collector Emitter Voltage (VCEO) :
100V
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
120V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Max Power Dissipation :
1W
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Datasheets
2SC4135S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC4135S-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:2SC4135, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, 2SC4135S-E pinout, 2SC4135S-E datasheet PDF, 2SC4135S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC4135S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC4135S-E


NPN 150°C TJ 100nA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SC4135S-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 100mA, 1A.The emitter base voltage can be kept at -6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SC4135S-E Features


the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at -6V


2SC4135S-E Applications


There are a lot of ON Semiconductor
2SC4135S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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