2SC4134S-E
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- Mfr.Part #
- 2SC4134S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A TP
- Stock
- 2,352
- In Stock ：
- 2,352
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Supplier Device Package :
- TP
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Bulk
- Power - Max :
- 800mW
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Frequency - Transition :
- 120MHz
- Datasheets
- 2SC4134S-E
NPN 150°C TJ 100nA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SC4134S-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2SC4134S-E Features
the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA
the supplier device package of TP
2SC4134S-E Applications
There are a lot of Rochester Electronics, LLC
2SC4134S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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