2SC4102U3T106S
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- Mfr.Part #
- 2SC4102U3T106S
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.05A SOT223-3
- Stock
- 5,255
- In Stock ：
- 5,255
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 6A
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Power - Max :
- 1.2W
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-261-4, TO-261AA
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 600mA, 6A
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 2V
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SC4102U3T106S
NPN -55°C~150°C TJ 100nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
2SC4102U3T106S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 600mA, 6A.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
2SC4102U3T106S Features
the DC current gain for this device is 150 @ 500mA 2V
the vce saturation(Max) is 300mV @ 600mA, 6A
2SC4102U3T106S Applications
There are a lot of ROHM Semiconductor
2SC4102U3T106S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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