2SC4102U3T106
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- Mfr.Part #
- 2SC4102U3T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A UMT3
- Stock
- 15,018
- In Stock ：
- 15,018
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 6V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency - Transition :
- 140MHz
- Current - Collector (Ic) (Max) :
- 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power - Max :
- 200mW
- Datasheets
- 2SC4102U3T106
NPN 150°C TJ 500nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4102U3T106 Overview
In this device, the DC current gain is 180 @ 2mA 6V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.There is a 120V maximal voltage in the device due to collector-emitter breakdown.
2SC4102U3T106 Features
the DC current gain for this device is 180 @ 2mA 6V
the vce saturation(Max) is 500mV @ 1mA, 10mA
2SC4102U3T106 Applications
There are a lot of ROHM Semiconductor
2SC4102U3T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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