2SC4083T106P
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- Mfr.Part #
- 2SC4083T106P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 11V 0.05A UMT3
- Stock
- 1,910
- In Stock ：
- 1,910
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- Highest Frequency Band :
- S B
- Continuous Collector Current :
- 50mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 5mA 10V
- Mount :
- Surface Mount
- Max Collector Current :
- 50mA
- HTS Code :
- 8541.21.00.75
- Base Part Number :
- 2SC4083
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 11V
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 3200MHz
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 13 Weeks
- VCEsat-Max :
- 0.5 V
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 50mA
- Collector-Base Capacitance-Max :
- 1.5pF
- Number of Terminations :
- 3
- Pin Count :
- 3
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 3.2 GHz
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Collector Emitter Saturation Voltage :
- 500mV
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 56
- Published :
- 2004
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 11V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 3V
- Collector Emitter Breakdown Voltage :
- 11V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 11V
- ECCN Code :
- EAR99
- Datasheets
- 2SC4083T106P
2SC4083T106P Documents
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4083T106P Overview
In this device, the DC current gain is 82 @ 5mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 10mA.A 50mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 3V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3200MHz.Input voltage breakdown is available at 11V volts.Single BJT transistor is possible for the collector current to fall as low as 50mA volts at Single BJT transistors maximum.
2SC4083T106P Features
the DC current gain for this device is 82 @ 5mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 3200MHz
2SC4083T106P Applications
There are a lot of ROHM Semiconductor
2SC4083T106P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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