2SC4081UBTLR
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- Mfr.Part #
- 2SC4081UBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3F
- Stock
- 84
- In Stock ：
- 84
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Base Part Number :
- 2SC4081
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 85
- Gain Bandwidth Product :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Collector Emitter Saturation Voltage :
- 400mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- hFE Min :
- 120
- Max Breakdown Voltage :
- 50V
- Package / Case :
- SC-85
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 2mm
- Transistor Application :
- AMPLIFIER
- Height :
- 900μm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 180MHz
- Max Collector Current :
- 150mA
- Mounting Type :
- Surface Mount
- Max Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Width :
- 1.25mm
- Continuous Collector Current :
- 150mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- JESD-30 Code :
- R-PDSO-F3
- Published :
- 2010
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 10 Weeks
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Terminal Form :
- Flat
- Datasheets
- 2SC4081UBTLR
2SC4081UBTLR Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SC4081UBTLR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4081UBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4081UBTLR Applications
There are a lot of ROHM Semiconductor
2SC4081UBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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