2SC4081UBTLR
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- Mfr.Part #
- 2SC4081UBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3F
- Stock
- 84
- In Stock ：
- 84
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Package / Case :
- SC-85
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- 2SC4081
- Length :
- 2mm
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 150mA
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F3
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Frequency :
- 100MHz
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 10 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Flat
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2010
- Terminal Position :
- Dual
- Number of Pins :
- 85
- Transition Frequency :
- 180MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- Continuous Collector Current :
- 150mA
- Width :
- 1.25mm
- Height :
- 900μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SC4081UBTLR
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SC4081UBTLR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4081UBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4081UBTLR Applications
There are a lot of ROHM Semiconductor
2SC4081UBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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