2SC4081U3T106R
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- Mfr.Part #
- 2SC4081U3T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3
- Stock
- 325
- In Stock ：
- 325
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Frequency - Transition :
- 180MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 150mA
- Power - Max :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- 2SC4081U3T106R
NPN 150°C TJ 100nA ICBO SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SC4081U3T106R Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.The device exhibits a collector-emitter breakdown at 50V.
2SC4081U3T106R Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 50mA
2SC4081U3T106R Applications
There are a lot of ROHM Semiconductor
2SC4081U3T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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