2SC4080E-TD-E
- Mfr.Part #
- 2SC4080E-TD-E
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- 2SC4080 - NPN EPITAXIAL PLANAR S
- Stock
- 19,401
- In Stock :
- 19,401
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 1.8 pF
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 1.3 W
- Collector-Emitter Voltage-Max :
- 200 V
- Series :
- *
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-F3
- Surface Mount :
- yes
- Power Dissipation Ambient-Max :
- 0.5 W
- Manufacturer :
- ON Semiconductor
- JESD-609 Code :
- e6
- Package :
- Bulk
- Polarity/Channel Type :
- NPN
- Package Shape :
- RECTANGULAR
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Flat
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Reach Compliance Code :
- Compliant
- DC Current Gain-Min (hFE) :
- 100
- Collector Current-Max (IC) :
- 0.1 A
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Configuration :
- Darlington
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 1 V
- Product Status :
- Active
- Datasheets
- 2SC4080E-TD-E
1 Elements SILICON NPN
2SC4080E-TD-E Overview
200 V is the maximization voltage for the collector-emitter.
2SC4080E-TD-E Features
2SC4080E-TD-E Applications
There are a lot of onsemi
2SC4080E-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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