2SC3837KT146N
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- Mfr.Part #
- 2SC3837KT146N
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.05A SMT3
- Stock
- 4,142
- In Stock ：
- 4,142
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Termination :
- SMD/SMT
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 20mA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Pin Count :
- 3
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 3V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 56 @ 10mA 10V
- Power Dissipation :
- 200mW
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Base Part Number :
- 2SC3837
- hFE Min :
- 56
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Highest Frequency Band :
- VERY HIGH FREQUENCY B
- Max Collector Current :
- 50mA
- Gain Bandwidth Product :
- 1.5 GHz
- Collector-Base Capacitance-Max :
- 1.5pF
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 1500MHz
- Collector Base Voltage (VCBO) :
- 30V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 20V
- Continuous Collector Current :
- 50mA
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 20V
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Datasheets
- 2SC3837KT146N
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC3837KT146N Overview
DC current gain in this device equals 56 @ 10mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 20mA.Single BJT transistor is essential to maintain the continuous collector voltage at 50mA to achieve high efficiency.An emitter's base voltage can be kept at 3V to gain high efficiency.As a result, the part has a transition frequency of 1500MHz.In extreme cases, the collector current can be as low as 50mA volts.
2SC3837KT146N Features
the DC current gain for this device is 56 @ 10mA 10V
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
a transition frequency of 1500MHz
2SC3837KT146N Applications
There are a lot of ROHM Semiconductor
2SC3837KT146N applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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