2SC3668-Y,T2F(M
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- Mfr.Part #
- 2SC3668-Y,T2F(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-71
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A MSTM
- Stock
- 40,041
- In Stock ：
- 40,041
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-71
- Power - Max :
- 1W
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2009
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Datasheets
- 2SC3668-Y,T2F(M
NPN 150°C TJ 1μA ICBO SC-71 Bulk Through Hole
2SC3668-Y,T2F(M Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SC3668-Y,T2F(M Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
2SC3668-Y,T2F(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3668-Y,T2F(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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