2SC3649T-TD-E
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- Mfr.Part #
- 2SC3649T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A PCP
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 160V
- Max Collector Current :
- 1.5A
- Terminal Form :
- Flat
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 180V
- Contact Plating :
- Tin
- JESD-609 Code :
- e6
- Gain Bandwidth Product :
- 120MHz
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Height :
- 1.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Published :
- 2009
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Voltage (VCEO) :
- 160V
- Width :
- 2.5mm
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Transition Frequency :
- 120MHz
- Length :
- 4.5mm
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 130mV
- Base Part Number :
- 2SC3649
- Datasheets
- 2SC3649T-TD-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3649T-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 130mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.
2SC3649T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3649T-TD-E Applications
There are a lot of ON Semiconductor
2SC3649T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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