2SC3649T-TD-E
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- Mfr.Part #
- 2SC3649T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A PCP
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 130mV
- Number of Terminations :
- 3
- Length :
- 4.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 120MHz
- Radiation Hardening :
- No
- Terminal Form :
- Flat
- Frequency :
- 120MHz
- Height :
- 1.5mm
- Number of Elements :
- 1
- Pin Count :
- 3
- Width :
- 2.5mm
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Base Part Number :
- 2SC3649
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 160V
- Surface Mount :
- yes
- Published :
- 2009
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Type :
- NPN
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Transition Frequency :
- 120MHz
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 180V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Power Dissipation :
- 500mW
- Collector Emitter Breakdown Voltage :
- 160V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Datasheets
- 2SC3649T-TD-E
2SC3649T-TD-E Documents
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3649T-TD-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 130mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 120MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.
2SC3649T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3649T-TD-E Applications
There are a lot of ON Semiconductor
2SC3649T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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