2SC3649S-TD-E

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Mfr.Part #
2SC3649S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 160V 1.5A PCP
Stock
60
In Stock :
60

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Transition Frequency :
120MHz
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
180V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Radiation Hardening :
No
Max Breakdown Voltage :
160V
Published :
2005
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Max Power Dissipation :
500mW
Collector Emitter Saturation Voltage :
130mV
Lead Free :
Lead Free
Number of Elements :
1
Factory Lead Time :
9 Weeks
Base Part Number :
2SC3649
Element Configuration :
Single
Gain Bandwidth Product :
120MHz
JESD-609 Code :
e6
Pin Count :
3
Vce Saturation (Max) @ Ib, Ic :
450mV @ 50mA, 500mA
Packaging :
Tape and Reel (TR)
Power Dissipation :
500mW
Emitter Base Voltage (VEBO) :
6V
ECCN Code :
EAR99
Pbfree Code :
yes
Max Collector Current :
1.5A
Current - Collector Cutoff (Max) :
1μA ICBO
Mounting Type :
Surface Mount
Package / Case :
TO-243AA
Surface Mount :
yes
Frequency :
120MHz
Collector Emitter Breakdown Voltage :
160V
Polarity/Channel Type :
NPN
Collector Emitter Voltage (VCEO) :
160V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
Operating Temperature :
150°C TJ
Number of Terminations :
3
Transistor Type :
NPN
Terminal Form :
Flat
Number of Pins :
3
Datasheets
2SC3649S-TD-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC3649S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SC3649, Mounting Type:Surface Mount, Package / Case:TO-243AA, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, 2SC3649S-TD-E pinout, 2SC3649S-TD-E datasheet PDF, 2SC3649S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC3649S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC3649S-TD-E


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

2SC3649S-TD-E Overview


DC current gain in this device equals 100 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 130mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 160V volts.In extreme cases, the collector current can be as low as 1.5A volts.

2SC3649S-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz


2SC3649S-TD-E Applications


There are a lot of ON Semiconductor
2SC3649S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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