2SC3647S-TD-E

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Mfr.Part #
2SC3647S-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 100V 2A PCP
Stock
2,032
In Stock :
2,032

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA ICBO
Pin Count :
3
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Pbfree Code :
yes
Factory Lead Time :
5 Weeks
Element Configuration :
Single
Mounting Type :
Surface Mount
Collector Emitter Voltage (VCEO) :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 5V
ECCN Code :
EAR99
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
400mV @ 100mA, 1A
Radiation Hardening :
No
JESD-609 Code :
e6
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Gain Bandwidth Product :
120MHz
Max Frequency :
1MHz
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Max Power Dissipation :
500mW
Length :
4.5mm
Collector Emitter Breakdown Voltage :
100V
Package / Case :
TO-243AA
Width :
2.5mm
Max Collector Current :
2A
Height :
1.5mm
Collector Base Voltage (VCBO) :
120V
Operating Temperature :
150°C TJ
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Max Breakdown Voltage :
100V
Published :
2005
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
130mV
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC3647S-TD-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-243AA, Operating Temperature:150°C TJ, 2SC3647S-TD-E pinout, 2SC3647S-TD-E datasheet PDF, 2SC3647S-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC3647S-TD-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC3647S-TD-E


NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

2SC3647S-TD-E Overview


This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 130mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 2A volts.

2SC3647S-TD-E Features


the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 400mV @ 100mA, 1A
the emitter base voltage is kept at 6V


2SC3647S-TD-E Applications


There are a lot of ON Semiconductor
2SC3647S-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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