2SC3646T-TD-E
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- Mfr.Part #
- 2SC3646T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A PCP
- Stock
- 24,731
- In Stock ：
- 24,731
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- JESD-609 Code :
- e6
- Max Frequency :
- 1MHz
- Gain Bandwidth Product :
- 120MHz
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Saturation Voltage :
- 100mV
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Max Power Dissipation :
- 500mW
- Length :
- 4.5mm
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 5 Weeks
- Surface Mount :
- yes
- Height :
- 1.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Package / Case :
- TO-243AA
- Transition Frequency :
- 120MHz
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Width :
- 2.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Datasheets
- 2SC3646T-TD-E
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3646T-TD-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 5V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 1A volts can be achieved.
2SC3646T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3646T-TD-E Applications
There are a lot of ON Semiconductor
2SC3646T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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