2SC3646T-P-TD-E
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- Mfr.Part #
- 2SC3646T-P-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A PCP
- Stock
- 5,629
- In Stock ：
- 5,629
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- Non-RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Transistor Type :
- NPN
- Supplier Device Package :
- PCP
- Current - Collector (Ic) (Max) :
- 1A
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 500mW
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 120MHz
- Datasheets
- 2SC3646T-P-TD-E
NPN 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SC3646T-P-TD-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.This product comes in a PCP device package from the supplier.Device displays Collector Emitter Breakdown (100V maximal voltage).
2SC3646T-P-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA
the supplier device package of PCP
2SC3646T-P-TD-E Applications
There are a lot of Rochester Electronics, LLC
2SC3646T-P-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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