2SC3646S-P-TD-E
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- Mfr.Part #
- 2SC3646S-P-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A
- Stock
- 7,822
- In Stock ：
- 7,822
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 400mV
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-243AA
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 500mW
- Frequency - Transition :
- 120MHz
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Transistor Type :
- NPN
- Datasheets
- 2SC3646S-P-TD-E
NPN 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount
2SC3646S-P-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.During maximum operation, collector current can be as low as 1A volts.
2SC3646S-P-TD-E Features
the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 40mA, 400mA
2SC3646S-P-TD-E Applications
There are a lot of ON Semiconductor
2SC3646S-P-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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