2SC3503CSTU

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Mfr.Part #
2SC3503CSTU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 300V 0.1A TO126-3
Stock
27,641
In Stock :
27,641

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
300V
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Transistor Type :
NPN
Number of Elements :
1
Base Part Number :
2SC3503
Weight :
761mg
Max Power Dissipation :
7W
Mount :
Through Hole
Max Collector Current :
100mA
hFE Min :
40
Package / Case :
TO-225AA, TO-126-3
Transition Frequency :
150MHz
Collector Emitter Voltage (VCEO) :
300V
Vce Saturation (Max) @ Ib, Ic :
600mV @ 2mA, 20mA
Packaging :
Tube
Collector Emitter Breakdown Voltage :
300V
Polarity/Channel Type :
NPN
Number of Terminations :
3
Number of Pins :
3
Transistor Application :
AMPLIFIER
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
150MHz
Frequency :
150MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
7W
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 10V
Datasheets
2SC3503CSTU
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SC3503CSTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:2SC3503, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, 2SC3503CSTU pinout, 2SC3503CSTU datasheet PDF, 2SC3503CSTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SC3503CSTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SC3503CSTU


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

2SC3503CSTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.

2SC3503CSTU Features


the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz


2SC3503CSTU Applications


There are a lot of ON Semiconductor
2SC3503CSTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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