2SC3503CSTU
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- Mfr.Part #
- 2SC3503CSTU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO126-3
- Stock
- 27,641
- In Stock ：
- 27,641
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 10V
- Base Part Number :
- 2SC3503
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 7W
- Gain Bandwidth Product :
- 150MHz
- Power Dissipation :
- 7W
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Frequency :
- 150MHz
- hFE Min :
- 40
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 300V
- Weight :
- 761mg
- Packaging :
- Tube
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Mount :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 300V
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2SC3503CSTU
2SC3503CSTU Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
2SC3503CSTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
2SC3503CSTU Features
the DC current gain for this device is 40 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
2SC3503CSTU Applications
There are a lot of ON Semiconductor
2SC3503CSTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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