2SC3328-Y,HOF(M
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- Mfr.Part #
- 2SC3328-Y,HOF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO92MOD
- Stock
- 20,114
- In Stock ：
- 20,114
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Published :
- 2009
- Supplier Device Package :
- LSTM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 900mW
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector (Ic) (Max) :
- 2A
- Datasheets
- 2SC3328-Y,HOF(M
NPN 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SC3328-Y,HOF(M Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 500mA 2V.When VCE saturation is 500mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package LSTM contains the product.The device has a 80V maximal voltage - Collector Emitter Breakdown.
2SC3328-Y,HOF(M Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of LSTM
2SC3328-Y,HOF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3328-Y,HOF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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