2SC3326-A,LF

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Mfr.Part #
2SC3326-A,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 20V 0.3A TO236
Stock
19,090
In Stock :
19,090

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Collector Emitter Breakdown Voltage :
20V
Max Collector Current :
100nA
Packaging :
Cut Tape (CT)
Max Breakdown Voltage :
20V
Published :
2014
Operating Temperature :
125°C TJ
RoHS Status :
RoHS Compliant
Current - Collector Cutoff (Max) :
100nA ICBO
Current - Collector (Ic) (Max) :
300mA
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
50V
Collector Emitter Voltage (VCEO) :
100mV
Transistor Type :
NPN
Factory Lead Time :
12 Weeks
Mount :
Surface Mount
Reach Compliance Code :
Unknown
Max Power Dissipation :
150mW
Vce Saturation (Max) @ Ib, Ic :
100mV @ 3mA, 30mA
Emitter Base Voltage (VEBO) :
25V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 4mA 2V
Frequency - Transition :
30MHz
Datasheets
2SC3326-A,LF
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC3326-A,LF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:125°C TJ, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SC3326-A,LF pinout, 2SC3326-A,LF datasheet PDF, 2SC3326-A,LF amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SC3326-A,LF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SC3326-A,LF


NPN 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

2SC3326-A,LF Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 4mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 3mA, 30mA.The emitter base voltage can be kept at 25V for high efficiency.The breakdown input voltage is 20V volts.Single BJT transistor is possible to have a collector current as low as 100nA volts at Single BJT transistors maximum.

2SC3326-A,LF Features


the DC current gain for this device is 200 @ 4mA 2V
the vce saturation(Max) is 100mV @ 3mA, 30mA
the emitter base voltage is kept at 25V


2SC3326-A,LF Applications


There are a lot of Toshiba Semiconductor and Storage
2SC3326-A,LF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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