2SC3325-O(TE85L,F)
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- Mfr.Part #
- 2SC3325-O(TE85L,F)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SMINI
- Stock
- 1,209
- In Stock ：
- 1,209
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 250mV
- Max Collector Current :
- 500mA
- Frequency - Transition :
- 300MHz
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 12 Weeks
- Power - Max :
- 200mW
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Published :
- 2014
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 100mA 1V
- Mount :
- Surface Mount
- Datasheets
- 2SC3325-O(TE85L,F)
NPN 150°C TJ 100nA ICBO NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC3325-O(TE85L,F) Overview
This device has a DC current gain of 70 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As a result, it can handle voltages as low as 50V volts.The maximum collector current is 500mA volts.
2SC3325-O(TE85L,F) Features
the DC current gain for this device is 70 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
2SC3325-O(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3325-O(TE85L,F) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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