2SC3324GRTE85LF
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- Mfr.Part #
- 2SC3324GRTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.1A TO236
- Stock
- 273,618
- In Stock ：
- 273,618
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Cut Tape (CT)
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 120V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Factory Lead Time :
- 11 Weeks
- Power - Max :
- 150mW
- Max Breakdown Voltage :
- 120V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 120V
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- hFE Min :
- 200
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Max Power Dissipation :
- 150mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Operating Temperature :
- 125°C TJ
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 120V
- Mount :
- Surface Mount
- Datasheets
- 2SC3324GRTE85LF
NPN 125°C TJ 100nA ICBO NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SC3324GRTE85LF Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 120V volts.The maximum collector current is 100mA volts.
2SC3324GRTE85LF Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
2SC3324GRTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3324GRTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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