2SB772

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 2V

Mount :

Through Hole

Transition Frequency :

100MHz

Voltage - Rated DC :

-30V

Current Rating :

-3A

hFE Min :

100

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Frequency :

100MHz

Radiation Hardening :

No

Pin Count :

3

Length :

7.8mm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 150mA, 3A

Number of Terminations :

3

Element Configuration :

Single

Max Collector Current :

3A

Transistor Type :

PNP

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tube

Polarity/Channel Type :

PNP

Max Power Dissipation :

12.5W

Current - Collector Cutoff (Max) :

100μA

Width :

2.9mm

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

100MHz

Height :

11.05mm

Collector Emitter Voltage (VCEO) :

30V

Power Dissipation :

12.5W

Lead Free :

Lead Free

Package / Case :

TO-225AA, TO-126-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

-1.1V

Number of Pins :

3

Collector Base Voltage (VCBO) :

60V

Operating Temperature :

150°C TJ

Base Part Number :

2SB7

Peak Reflow Temperature (Cel) :

250