2SB1733TL
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- Mfr.Part #
- 2SB1733TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TUMT3
- Stock
- 66,319
- In Stock ：
- 66,319
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SB1733
- Collector Emitter Saturation Voltage :
- -150mV
- Mounting Type :
- Surface Mount
- Height :
- 820μm
- Transition Frequency :
- 320MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-SMD, Flat Lead
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -30V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- JESD-609 Code :
- e2
- Frequency - Transition :
- 320MHz
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Length :
- 2.1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Copper, Tin
- hFE Min :
- 270
- Emitter Base Voltage (VEBO) :
- -6V
- Published :
- 2013
- Max Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.8mm
- Factory Lead Time :
- 13 Weeks
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 800mW
- Pin Count :
- 3
- Gain Bandwidth Product :
- 400MHz
- Datasheets
- 2SB1733TL
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SB1733TL Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.320MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
2SB1733TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz
2SB1733TL Applications
There are a lot of ROHM Semiconductor
2SB1733TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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