2SB1733TL
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- Mfr.Part #
- 2SB1733TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TUMT3
- Stock
- 66,319
- In Stock ：
- 66,319
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -30V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Height :
- 820μm
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Package / Case :
- 3-SMD, Flat Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transition Frequency :
- 320MHz
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- hFE Min :
- 270
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 30V
- Base Part Number :
- 2SB1733
- JESD-609 Code :
- e2
- Factory Lead Time :
- 13 Weeks
- Gain Bandwidth Product :
- 400MHz
- Frequency - Transition :
- 320MHz
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Length :
- 2.1mm
- Max Frequency :
- 100MHz
- Transistor Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Width :
- 1.8mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Contact Plating :
- Copper, Tin
- Collector Emitter Saturation Voltage :
- -150mV
- Max Collector Current :
- 1A
- Published :
- 2013
- Terminal Position :
- Dual
- Max Power Dissipation :
- 800mW
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- -6V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- 2SB1733TL
2SB1733TL Documents
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
2SB1733TL Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.320MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
2SB1733TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 320MHz
2SB1733TL Applications
There are a lot of ROHM Semiconductor
2SB1733TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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